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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508D www..com DESCRIPTION *With TO-3PN package *High voltage;high speed *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 7.5 8 15 4 6 125 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508D CHARACTERISTICS www..com Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH IE=600mA; IC=0 IC=4.5A; IB=1.1A IC=4.5A; IB=1.29A IC=4.5A; IB=1.7A VCE=rated; VBE=0 T=125C VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A VCB=10V;f=1MHz 700 V Emitter-base breakdown voltage 7.5 13.5 V VCE(sat-1) VCE(sat-2) VBE(sat) ICES IEBO hFE-1 hFE-2 VF CC Collector-emitter saturation voltage 5.0 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.3 1.0 2.0 140 390 V Collector cut-off current mA Emitter cut-off current mA DC current gain 7 13 23 DC current gain 4 5.5 7.5 Diode forward voltage 1.6 2.0 V Collector capacitance 80 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BU2508D Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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